Thermodynamic modeling of the V-Si-B system

Publication date: December 2017
Source:Calphad, Volume 59
Author(s): Antonio Augusto Araujo Pinto da Silva, Nabil Chaia, Flavio Ferreira, Gilberto Carvalho Coelho, Jean-Marc Fiorani, Nicolas David, Michel Vilasi, Carlos Angelo Nunes
In the present work, the V-Si-B ternary system was thermodynamically modeled using the CALPHAD method. The thermodynamic descriptions of the V-Si and B-Si binary systems were taken from literature while the parameters of binary V-B were re-evaluated, based on new experimental information. The ternary thermodynamic description was based on experimental data of isothermal section and liquidus projection. The binary compounds V3B2, VB, V5B6, V3B4, V2B3 and VB2 were modeled as stoichiometric phases; the terminal solid solutions BCC and β-Rhomb were modeled using the sublattice models (V,Si)1(B,va)3 and (B)93(B, Si)12; the ternary phases D88 and T2 were modeled as (V)0.5556(B,Si)0.3333(B,va)0.1111 and (V)0.625(B,Si)0.375, respectively. A set of thermodynamic parameters is proposed and the results showed a good agreement with available experimental information from the literature.



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