Fundamental aspects to localize self-catalyzed III-V nanowires on silicon

Fundamental aspects to localize self-catalyzed III-V nanowires on silicon

Fundamental aspects to localize self-catalyzed III-V nanowires on silicon, Published online: 20 February 2019; doi:10.1038/s41467-019-08807-9

The ability to place perfectly aligned vertical nanowires at chosen positions on a silicon substrate is an important challenge in device fabrication. Here, the authors propose a mechanism to explain self-catalyzed III-V nanowire growth on silicon, providing valuable insights for growing high yield nanowire arrays.

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