Broadband Cr3+, Sn4+‐doped Oxide Nanophosphors for Infrared Mini Light‐Emitting Diodes

Light‐emitting diode breaks barriers of size and performance for display. With the device getting smaller, the materials need to get smaller. However, Chromium(III)‐doped oxide phosphors, which emit near‐infrared (NIR) light, have recently been used in small electronic devices. In this work, we used mesoporous silica nanoparticles as nanocarriers. The nanophosphor ZnGa2O4:Cr3+,Sn4+ formed in the mesopore after sintering. Good dispersity and morphology were performed with average diameters of 71 ± 7 nm. It emitted light at 600–850 nm which intensity was optimized by tuning the doping ratio of Cr3+ and Sn4+. Meanwhile, the light conversion efficiency increased from 7.8% to 37% with molar concentration increased from 0.125 M to 0.5 M. The higher radiant flux of 3.3 mW was obtained by operating an input current of 45 mA. However, the NIR nanophosphor showed good performance on mini‐light emitting diode chips.

from A via a.sfakia on Inoreader https://ift.tt/2rCuFHW